Three plate MIM capacitor via integrity verification

ABSTRACT

A three plate MIM capacitor structure includes a three plate MIM capacitor, a first wire in a metal layer above/below the three plate MIM, a second wire below/above the three plate MIM, a third wire below/above the three plate MIM, a first via connected to the first test wire, a second via connected to a middle plate of the three plate MIM, and a third via connected to the top and bottom plates of the three plate MIM. The test structure may verify the integrity the MIM capacitor by applying a potential to the first test wire, applying ground potential to both the second test wire and the third test wire, and detecting leakage current across the first wire and the second and third wires or detecting leakage current across the second wire and the third wire.

FIELD

Embodiments of invention generally relate to semiconductor devices,design structures for designing a semiconductor device, andsemiconductor device verification methods. More particularly,embodiments relate to a three plate metal-insulator-metal (MIM)capacitor integrity verification structure within a semiconductor devicethat may verify the operational integrity of a via (verticalinterconnect access) that extends through one or more of the threeplates of the MIM capacitor.

BACKGROUND

To obtain greater capacitance density, three plate MIM capacitors havebeen utilized as decoupling capacitors located between metal layers ofintegrated circuit devices. The three plate MIM capacitor includes a topplate, middle plate, and bottom plate, each separated by an insulator.Each plate may be electrically connected to a wire within a metal layerbelow or above the three plate MIM capacitor by a via.

Typically, the via is fabricated by forming a vertical trench by etchingmultiple layers of the insulator. Due to different material propertiesof the multiple layers, the via etch may undesirably traversehorizontally, and thereby form a pocket located outside a predeterminedvertical bound of the trench. Prior to forming the via within thetrench, a liner may be formed upon the vertical trench sidewall toattempt to create the desired vertical bound of the trench. However, theliner may not effectively fill or cover the pocket and conductivematerial may be formed within the trench during via formation or maylater leak into the pocket during operation of the semiconductor device.The conductive material within the pocket may result in undesiredelectrical shorting.

SUMMARY

In an embodiment of the present invention, a method of testing a threeplate MIM capacitor structure is claimed. The method includes applying avoltage to a first plate of a three plate MIM capacitor, a second plateof the three plate MIM capacitor, and a third plate of the three plateMIM capacitor. The method further includes applying ground potential toa via adjacent to the three plate MIM capacitor. The method furtherincludes detecting leakage current across the middle plate and the via,detecting leakage current across the top plate and the via, or detectingleakage current across the middle plate and the via. The method furtherincludes determining there is a short between one of the bottom plate,middle plate, or top plate and the via caused by a defect of the via, ifleakage current is detected across the middle plate and the via, ifleakage current is detected across the top plate and the via, or ifleakage current is detected across the middle plate and the via.

In another embodiment of the present invention, a three plate MIMcapacitor structure is claimed. The structure includes a three plate MIMcapacitor comprising a bottom plate, a middle plate, and a top plate.The structure further includes a via matrix normal to the bottom plate,the middle plate, and the top plate. The via matrix includes a first viagroup that includes vias that are adjacent to the bottom plate, middleplate, and top plate. The via matrix a second via group that includesvias that are configured to contact only the middle plate. The viamatrix also includes a third via group that includes vias that areconfigured to contact only the top plate and bottom plate. The structurefurther includes a first wire within a wiring level below the threeplate MIM capacitor connected to the first via group, a second wirewithin a wiring level above the three plate MIM capacitor connected tothe second via group, and a third wire within a wiring level above thethree plate MIM capacitor connected to the third via group.

In another embodiment of the present invention, a three plate MIMcapacitor structure is claimed. The structure includes a three plate MIMcapacitor comprising a bottom plate, a middle plate, and a top plate.The structure further includes a via matrix normal to the bottom plate,the middle plate, and the top plate. The via matrix includes a first viagroup that includes vias that are adjacent to the bottom plate, middleplate, and top plate. The via matrix a second via group that includesvias that are configured to contact only the middle plate. The viamatrix also includes a third via group that includes vias that areconfigured to contact only the top plate and bottom plate. The structurefurther includes a first wire within a wiring level above the threeplate MIM capacitor connected to the first via group, a second wirewithin a wiring level below the three plate MIM capacitor connected tothe second via group, and a third wire within a wiring level below thethree plate MIM capacitor connected to the third via group.

These and other embodiments, features, aspects, and advantages willbecome better understood with reference to the following description,appended claims, and accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention are attained and can be understood in detail, a moreparticular description of the invention, briefly summarized above, maybe had by reference to the embodiments thereof which are illustrated inthe appended drawings.

It is to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 depicts a semiconductor wafer, in accordance with variousembodiments of the present invention.

FIG. 2 depicts a cross section view of a semiconductor device thatincludes a three plate test MIM capacitor structure, in accordance withvarious embodiments of the present invention.

FIG. 3A-FIG. 3B depicts detailed cross section views of a semiconductordevice that includes a shorted three plate MIM capacitor as a result ofa via defect, in accordance with various embodiments of the presentinvention.

FIG. 4 depicts a cross sectional view of a three plate MIM capacitortest structure, in accordance with various embodiments of the presentinvention.

FIG. 5A-FIG. 5C depict normal views of each plate of a three plate MIMcapacitor test structure, in accordance with various embodiments of thepresent invention.

FIG. 6A and FIG. 6B depicts normal views of wires within metal layers ofa three plate MIM capacitor test structure, in accordance with variousembodiments of the present invention.

FIG. 7 depicts an exemplary data handling device that utilizes asemiconductor device that includes a three plate MIM capacitor teststructure, in accordance with various embodiments of the presentinvention.

FIG. 8 depicts a flow diagram of a method of verifying the operationalintegrity of one or more vias that extend through one or more plates ofa three plate MIM capacitor test structure, in accordance with variousembodiments of the present invention.

FIG. 9 depicts a block diagram of an exemplary design flow used insemiconductor integrated circuit (IC) logic design, simulation, test,layout, and/or manufacture, in accordance with various embodiments ofthe present invention.

The drawings are not necessarily to scale. The drawings are merelyschematic representations, not intended to portray specific parametersof the invention. The drawings are intended to depict only exemplaryembodiments of the invention. In the drawings, like numbering representslike elements.

DETAILED DESCRIPTION

Detailed embodiments of the claimed structures and methods are disclosedherein; however, it can be understood that the disclosed embodiments aremerely illustrative of the claimed structures and methods that may beembodied in various forms. These exemplary embodiments are provided sothat this disclosure will be thorough and complete and will fully conveythe scope of this invention to those skilled in the art. In thedescription, details of well-known features and techniques may beomitted to avoid unnecessarily obscuring the presented embodiments.

Embodiments of invention relate to a three plate MIM capacitor teststructure within a semiconductor device. The three plate MIM teststructure includes a three plate MIM, a first test wire in a metal layerabove/below the three plate MIM, a second test wire below/above thethree plate MIM, a third test wire below/above the three plate MIM, afirst via connected to the first test wire, a second via connected to amiddle plate of the three plate MIM, and a third via connected to thetop and bottom plates of the three plate MIM.

The three plate MIM test structure verifies the operational integrity ofat least one via that extends through one or more of the three plates ofthe MIM capacitor by applying an electric potential to the first testwire, applying ground potential or an opposite polarity potential toboth the second test wire and the third test wire, and detecting leakagecurrent across the first test wire and the second and third test wiresor detecting leakage current across the second test wire and the thirdtest wire. If leakage current is detected, a short is present within thethree plate MIM test structure. The operational integrity or structuralcomponent of the three plate MIM test structure may be indicative ofoperational integrity or structural component integrity of a three plateMIM within a functional area of the semiconductor device. In otherwords, for example, if a short is present in the three plate MIM teststructure, a short is more apt to be present in the functional area ofthe semiconductor device and, inversely, if a short is not present inthe three plate MIM test structure, a short is less apt to be present inthe functional area of the semiconductor device. As such, the threeplate MIM test structure may be utilized in semiconductor device qualityand reliability studies. For example, if a short is detected in thethree plate MIM test structure, the semiconductor device and/or anelectronic device connected thereto, may be excluded from furthermovement within the stream of commerce.

Referring now to the figures, wherein like components are labeled withlike numerals, exemplary structures of a semiconductor device, inaccordance with embodiments of the present invention are shown, and willnow be described in greater detail below. The specific number ofcomponents depicted in the figures and the cross section orientation waschosen to best illustrate the various embodiments described herein.

FIG. 1 depicts a particular example of a semiconductor structure, as asemiconductor wafer 5 with various regions, in accordance with variousembodiments of the present invention. Wafer 5 may include a plurality ofchips 10 separated by kerfs 20. Each chip 10 may include an activeregion wherein micro-devices, such as transistors, wiring lines,input-output contacts, or the like, may be built using applicablemicrofabrication process steps such as doping or ion implantation,etching, deposition of various materials, photolithographic patterning,electroplating, etc. Wafer 5 may further comprise one or more testingregions 30. In various embodiments, the one or more testing regions 30may be included within the active region of a chip 10 and/or may beincluded within various kerf 20 locations. The kerf 20 may include thescribe between each chip 10 and/or the outside area of the wafer 5 wherea full chip 10 may not be formed. Upon when the chips 10 are cut fromthe wafer 5, each independent chip 10 may be referred to as a die. Forclarity, in various embodiments, chip 10 may be diced or un-diced fromwafer 5.

Referring to FIG. 2 which depicts a cross section view of a particularsemiconductor structure, as a chip 10, in accordance with variousembodiments of the present invention. The chip 10 may include asemiconductor substrate 50, a front end of the line (FEOL) layer(s) 60upon the substrate 50, and a back end of the line (BEOL) layer(s) 70upon the FEOL layer 60.

The semiconductor substrate 50 may include, but is not limited to: anysemiconducting material such conventional Si-containing materials,Germanium-containing materials, GaAs, InAs and other likesemiconductors. Si-containing materials include, but are not limited to:Si, bulk Si, single crystal Si, polycrystalline Si, SiGe, amorphous Si,silicon-on-insulator substrates (SOI), SiGe-on-insulator (SGOI),annealed poly Si, and poly Si line structures. In various embodiments,substrate 50 may be, for example, a layered substrate (e.g. silicon oninsulator) or a bulk substrate.

In various embodiments, micro-devices 55 may be formed upon or withinthe substrate 50. Devices 55 and the process of device 55 fabricationare well known in the art. Micro-devices 55 may be for example, a diode,field effect transistor (FET), metal oxide FET (MOSFET), fin FET, or anysuitable combination thereof. Likewise, micro-devices 55 also may becomponents of the aforementioned, such as a gate, fin, source, drain,channel, etc. that when combined form a complete micro-device. Forclarity, though one micro-device 55 is shown, there are typicallynumerous micro-devices 55 included within active regions of each chip10. In certain embodiments, micro-devices 55 may be formed withinsubstrate 50. For example, a source and drain of a transistor may beformed within substrate 50. To electrically isolate various devices 55from another device 55, chips 10 may include isolation regions (notshown) formed upon and/or within substrate 50 (e.g. an isolation regionmay electrically isolate an n-FET device 55 from a p-FET device 55,etc.).

The FEOL layer 60 is the layer of chip 10 that generally includesindividual devices 55 (e.g. transistors, capacitors, resistors, etc.)patterned in or upon substrate 50. For example, FinFETs may beimplemented in FEOL layer 60 with gate first or gate last FinFETfabrication process techniques. The FEOL layer 60 may include devices55, one or more dielectric layers, vias 64 to electrically connectdevice 55 to BEOL wiring layers, etc. The BEOL layer 70 is the layer ofchip 10 including one or more wiring, and associated wiring dielectriclevels, formed by known wiring fabrication techniques utilizing knownmaterials. The BEOL wiring may be formed as various wiring lines at eachwiring level. For example, wiring level 82 may be formed, followed bywiring level 86 that is generally above wiring level 82. BEOL layer 70may further include multiple vertical interconnect accesses (vias) 65 toelectrically connect different wiring levels or to connect a wiring lineto an input output (I/O) contact pad 90 and may further include multiplevias 64 to electrically connect a wiring level to a micro-device 55. Forclarity, therefore, there may be two types of vias within chip 10: onetype that connects or otherwise contacts a wiring line to a micro-device55 and one type that connects or otherwise contacts two different wiringlevels or that connects or otherwise contacts a wiring line and an I/Ocontact pad 90. For clarity, though two wiring levels 82 and 86 areshown, chip 10 may include numerous wiring levels.

BEOL layer 70 may also include multiple dielectric layers that may beutilized to form wiring lines within each wiring level 82 and 86. Forexample, BEOL layer 70 may include a first dielectric layer generallyutilized to form wiring layer 82 and a second dielectric layer generallyutilized to form wiring level 86, etc. In various embodiments, wiringlines may be formed, for example, utilizing photolithography, etching,and deposition techniques. More specifically, a pattern may be producedby applying a masking layer such as a photoresist or photoresist with anunderlying hardmask, to a surface to be etched (e.g., a dielectriclayer); exposing the photoresist to a pattern of radiation; and thendeveloping the pattern into the photoresist utilizing a resistdeveloper. Once the patterning of the photoresist is completed, thesections covered by the photoresist are protected while the exposedregions are removed using a selective etching process that removes theunprotected regions. Such etching techniques may form wiring linetrenches that may be filled, deposited therewithin, etc. with anelectrically conductive material to form the wiring line. In certainembodiments, multiple etchings and depositions may be employed to formone or more wiring lines within each wiring level 82, 86, etc.

The I/O contact pads 90 are further configured to connect, directly orindirectly, with respective contact pads of a system board within anelectronic data handling device. The electronic data handling device maybe a personal computer, server, cash machine, kiosk, infotainmentsystem, or the like.

Chip 10 may further include a three-plate MIM capacitor 84 locatedbetween wiring levels 82 and 86. The three plate MIM capacitor 84includes a top plate, middle plate, and bottom plate, each separated bydielectric material(s) of BEOL layer 70. Each plate of capacitor 84 maybe electrically connected to one or more wire lines within wire level 86or to one or more wire lines within wire level 82 by one or more vias65. As such, one or more vias 65 may extend completely through the threeplates of MIM capacitor 84.

A three-plate MIM capacitor test structure 100 is located within a testregion 30 that is within the boundary of chip 10 and/or within kerf 20of wafer 5. Test structure 100 includes a three-plate MIM capacitor 124located between wiring levels 122 and 126. The three plate MIM capacitor124 includes a top plate, middle plate, and bottom plate, each separatedby dielectric material(s) of BEOL layer 70. Each plate of capacitor 124may be connected to one or more wire lines within wire level 122 or toone or more wire lines within wire level 126 by one or more vias 165.Via 165 is a particular type of via that connects respective wiringlines in different wiring levels or connects a wiring line to a test pad190. For clarity, one or more vias 165 may extend completely through thethree plates of MIM capacitor 124. In an embodiment, wiring level 82 isthe same wiring level as wiring level 122 and wiring level 86 is thesame wiring level as wiring level 126. That is, a top and bottom surfaceof a wiring line in wire level 86 may be coplanar with a respective topand bottom surface of a wiring line in wire level 126.

For clarity, the one or more dielectric materials of BEOL layer 70between the top plate, middle plate, and bottom plate of the MIMcapacitor 84 are typically high-K material(s), such as HfO2-Al2O3, orthe like, as is known in the art, while the one or more dielectricmaterial(s) at the same level as the MIM capacitor 84, between wiringlevel 82 and wiring level 86, outside of the MIM capacitor 84 aretypically lower K material(s), such as SiO2, or SiCOH, or the like, asis known in the art.

For clarity, there are two options to connect a plate of the MIM 124 toa test pad 190. The first option is to connect the via 165 that contactsthe plate of the MIM 124 to one or more wiring lines that is connectedto the test pad 190. The second option is to connect the via 165 thatcontacts the plate of the MIM 124 directly to the test pad 190.

Test structure 100 may further include various test pads 190. Each testpad 190 is configured to make connection with a probe that may beinternal to or external to chip 10. Test pad 190 may be a similarstructure relative to I/O contact 90 or may be a different structure.For example, test pads 190 may be exposed or otherwise accessibleportions of respective wiring lines within one or more particular wiringlevels. The probe may apply a load, such as a voltage, to a wiring lineand/or a via 165 that which partially extends through or entirelyextends through MIM capacitor 124.

In an embodiment, I/O contact 90 and/or test pad 190 may be fabricatedby forming a opening in the material(s) of BEOL layer 70, forming a seedlayer, performing an electrochemical plating (ECP) to fill the openingwith a metallic material, and then performing a CMP to remove excessmetallic material. Additional metal layers or bumps (e.g. solder bumps,etc.) may further be formed upon I/O contact 90 to allow for subsequentinterconnect with another electrical package (e.g. an interposer, systemboard, or the like).

Referring to FIG. 3A and FIG. 3B which depict cross section views ofchip 10, in accordance with various embodiments of the presentinvention. The MIM capacitor 84 located between wiring levels 82 and 86and includes a top plate 46, middle plate 44, and bottom plate 42, eachseparated by dielectric material(s) of BEOL layer 70.

As shown in FIG. 3A and in FIG. 3B, a via 65 may be formed by initiallyforming a vertically orientated via trench 30 within the dielectricmaterial(s) of BEOL layer 70. The via trench 30 may expose a portion ofa wiring line 83 within wiring level 82 so as to allow for the via 65 tocontact the wiring line 83. The trench 30 may be formed by etchingmultiple layers of the dielectric material(s) of BEOL layer 70. Due todifferent material properties of the multiple layers, the via etch mayundesirably traverse horizontally, and thereby form a pocket 32 locatedoutside a predetermined vertical bound of the trench 30. Prior toforming the via 65 within the trench 30, a liner (not shown) may beformed upon the vertical trench sidewall to attempt to create thedesired vertical bound of the trench. However, the liner may noteffectively fill or cover the pocket 32 and conductive material may beformed within the trench 30 and pocket 32 during via 65 formation. Thevia 65 may be subsequently formed by forming a seed within trench 30 andperforming an ECP to fill the opening with a metallic material, bydeposition, or by other known via formation techniques. The via 65 isconfigured to contact at least one level within the MIM capacitor 84.For example, via 65 is configured to only contact middle plate 44.However, because of the existence of pocket 32, the material of via 65may also contact top plate 46, thus shorting the top plate 46 and middleplate 44 of MIM capacitor 84. In another defect occurrence, shorting ofMIM capacitor 84 may also occur during operation of the chip 10 when thematerial of via 65 leaks outside the configured boundary of the viatrench 30 and contacts a plate of the of MIM capacitor 84, that whichvia 65 was not configured to contact. For clarity, pocket 32 may formbetween middle plate 44 and top plate 46 and/or between middle plate 44and bottom plate 42.

As shown in FIG. 3B, a wiring line 87 may be formed within wiring level86. The wiring line 87 may be formed by known fabrication techniqueswith known materials. For example, an dielectric layer may be applied tothe top surface of the structure of FIG. 3A. The dielectric layer may bepatterned to form a wiring line trench and the wiring line 87 may beformed therewithin. The wiring line 87 may connect to via 65. As such,wiring line 87 and wiring line 83 may contact via 65 that contactsbottom plate 42, middle plate 44, and/or upper plate 46, as desired. Insome implementations, a dual damascene fabrication process may be usedto form wiring line 87 and via 65 simultaneously, as is known in theart.

The number of vias 65 and wiring lines 83, 87 within a chip 10 andwithin wafer 5 may be so numerous that it becomes difficult to testwhether there are shorts within a particular MIM capacitor 84. As such,a test structure 100 may be included within one or more chips 10 and/orwithin wafer 5 in order to verify the operational integrity orstructural components of the test structure 100. The test structure 100indicates the operational integrity or structural component integrity ofthree plate MIM 84 within the functional area of the chip 10 and/orwafer 5. The term functional area utilized herein shall mean the area ofthe semiconductor structure wherein the three plate MIM 84 is locatedand wherein the three plate MIM 84 is utilized as a decoupling capacitorbetween wiring levels 82, 86. If as short is detected in test structure100, a short is more apt to be present in the functional area of chip 10and/or wafer 5, and inversely, if a short is not present in the threeplate MIM test structure 100, a short is less apt to be present in thefunctional area of the chip 10 and/or wafer 5. As such, the three plateMIM test structure 100 may be utilized in semiconductor device qualityand reliability studies. For example, if a short is detected in thethree plate MIM test structure 100, the chip 10, wafer 5, and/or anelectronic device connected thereto, may be excluded from furthermovement within the stream of commerce.

If a short is not initially detected, test structure 100 may be used tofurther study MIM capacitor reliability by applying voltages todifferent vias or via groups for extended period of time to determine ifany conducting materials can be driven out of the via boundary causing aMIM capacitor short. By using applying different voltages for differentperiod of time, a reliability kinetic study can be performed to enableMIM lifetime projections.

FIG. 4 depicts a cross sectional view of three plate MIM capacitor teststructure 100, in accordance with various embodiments of the presentinvention. Test structure 100 may include a three plate MIM 124, a testwire 123 a, a test wire 127 b, a test wire 127 c, a via 165 a connectedto test wire 123 a, a via 165 b connected to a middle plate 144 of thethree plate MIM 124, and a via 165 c connected to a top plate 146 and abottom plate 142 of the three plate MIM 124. Test structure 100 may alsoinclude a test pad 190 a connected, directly or indirectly, to via 165a; a test pad 190 b connected, directly or indirectly, to via 165 b; anda test pad 190 c connected, directly or indirectly, to via 165 c.

Test wire 127 a may be connected to via 165 a at the proximate end ofvia 165 a relative to test wire 123 a. In this implementation, test wire127 a may be connected to test pad 190 a. Alternatively, via 165 a maybe connected directly to test pad 190 a at the proximate end of via 165a relative to test wire 123 a. Test wire 123 b may be connected to via165 b at the proximate end of via 165 b relative to test wire 127 b. Inthis implementation, test wire 123 b may be connected to node 118 b,such as a wiring line, or the like. Alternatively, via 165 b may beconnected directly to node 118 b at the proximate end of via 165 brelative to test wire 127 b. Likewise, test wire 123 c may be connectedto via 165 c at the proximate end of via 165 c relative to test wire 127c. In this implementation, test wire 123 c may be connected to node 118c, such as a different wiring line. Alternatively, via 165 c may beconnected directly to node 118 c at the proximate end of via 165 crelative to test wire 127 c. Similarly, via 165 a directly, orindirectly by test wire 123 a, may be connected to a node 118 a, such asa different wiring line or the like, below the MIM 124.

Wiring level 126 and wiring level 128 are located above the MIM 124 andwiring level 120 and wiring level 122 are located below the MIM 124.Test wire 123 a may be located in wiring level 120 or wiring level 122;test wire 127 b may be located in wiring level 126 or wiring level 128;and test wire 127 c may be located in wiring level 126 or wiring level128, as is depicted in FIG. 4. Node 118 a, node 118 b, and/or node 118 cmay be located in wiring level or generally below test wires 123 a, 123b, and 123 c, respectively.

For clarity, the relative positioning of test wires above MIM 124 andthe test wires below MIM 124 may be switched. For example, test wire 123a may be located in wiring level 126 or wiring level 128; test wire 127b may be located in wiring level 120 or wiring level 122; and test wire127 c may be located in wiring level 120 or wiring level 122.

In a particular embodiment, as shown in FIG. 4, test structure 100includes three test wires 123 a, 127 b, and 127 c. In this embodiment,test wire 123 a is connected to via 165 a that is not connected with anyof the plates 142, 144, or 146 of the MIM 124, test wire 127 b isconnected to via 165 b that is connected to only plate 144 of the MIM124, and test wire 127 c is connected to via 165 c that is connected toonly plate 142 and to plate 146 of the MIM 124.

In another embodiment, test structure 100 includes four test wires 123a, 127 b, 127 c′ (not shown in FIG. 4), and 127 c″ (not shown in FIG.4). In this embodiment, test wire 123 a is connected to via 165 a thatis not connected with any of the plates 142, 144, or 146 of the MIM 124,test wire 127 b is connected to via 165 b that is connected to onlyplate 144 of the MIM 124, test wire 127 c′ is connected to a via 165 c′that is connected to only plate 146 of the MIM 124, and test wire 127 c″is connected to a via 165 c″ that is connected to only plate 142 of theMIM 124. Test wire 127 c′ and 127 c″ may be respectively located aboveor below the MIM 124. For example, test wire 123 a and test wire 127 c′may be located below the MIM 124 and test wire 127 b and 127 c″ may belocated above the MIM 124, test wire 123 a may be located below the MIM124 and test wire 127 b, 127 c″, and 127 c′″ may be located above theMIM 124, or the like.

The three plate MIM test structure 100 verifies the operationalintegrity of at least one via 165 a, 165 b, 165 c, 165 c′, or 165 c″that extends through one or more of the three plates 142, 144, 146 ofthe MIM capacitor 124 by applying a potential to one of the vias 165 a,165 b, 165 c, 165 c′, or 165 c″ and applying ground potential oropposing potential to one other of the vias 165 a, 165 b, 165 c, 165 c′,or 165 c″ and detecting leakage current between different vias. Ifleakage current is detected, a short is present within the three plateMIM test structure 100.

FIG. 5A depicts a normal view, such as a top view or bottom view, ofplate 146 of MIM capacitor 124. In an exemplary embodiment depicted inFIG. 5A-FIG. 5C, test structure 100 includes four test wires 123 a, 127b, 127 c′, and 127 c″ (not shown in FIG. 5A-FIG. 5C) and respective vias165 a, 165 b, 165 c′, and 165″. Plate 146 includes clearances 150 eachclearance 150 generally aligned with an associated via to allow the viato pass through plate 146 without making contact with plate 146. Theclearance 150 allows for the plate 146 to be insulated from the viapassing through the clearance 150. As depicted in FIG. 5A, plate 146 isconnected to one or more vias 165 c′ and plate 146 is insulated from via165 a, via 165 b, and via 165 c″.

FIG. 5B depicts a normal view, such as a top view or bottom view, ofplate 144 of MIM capacitor 124. Plate 144 includes clearances 150 eachclearance 150 generally aligned with an associated via to allow the viato pass through plate 144 without making contact with plate 144. Theclearance 150 allows for the plate 144 to be insulated from the viapassing through the clearance 150. As depicted in FIG. 5B, plate 144 isconnected to one or more vias 165 b and plate 144 is insulated from via165 a, via 165 c′, and via 165 c″.

FIG. 5C depicts a normal view, such as a top view or bottom view, ofplate 142 of MIM capacitor 124. Plate 142 includes clearances 150 eachclearance 150 generally aligned with an associated via to allow the viato pass through plate 142 without making contact with plate 142. Theclearance 150 allows for the plate 142 to be insulated from the viapassing through the clearance 150. As depicted in FIG. 5C, plate 142 isconnected to one or more vias 165 c″ and plate 142 is insulated from via165 a, via 165 b, and via 165 c′.

In the one or more embodiments depicted in FIG. 5A-FIG. 5C, the MIM 124includes vias 165 a, 165 b, 165 c′, and 165 c″. The vias 165 a passthrough each of the plates 142, 144, 146 without contacting the plates142, 144, 146; the vias 165 b pass through each of the plates 142, 146without contacting the plates 142, 146 and contacts plate 144; the vias165 c′ pass through each of the plates 142, 144 without contacting theplates 142, 144 and contacts plate 146; and the vias 165 c″ pass througheach of the plates 144, 146 without contacting the plates 144, 146 andcontacts plate 142.

In an embodiment, groups of multiple vias 165 may be aligned in anorientation orthogonal to a normal length of the plates. For example,vias 165 a, vias 165 b, vias 165 c′, and vias 165 c″ are aligned inrespective orientations orthogonal to side 147 of the plates. Generally,numerous vias 165 may be arranged as a via grid across the normal viewof MIM 124, as depicted in FIG. 5A-FIG. 5C. Each group of vias 165 a,vias 165 b, vias 165 c′, and vias 165 c″ may be arranged in distinct oneor more column orientations, one or more row orientations, or one ormore diagonal orientations within the via grid. For example, as is shownin FIG. 5A-FIG. 5C vias 165 a, vias 165 b, vias 165 c′, and vias 165 c″are arranged in distinct one or more column orientations.

In various embodiments, each plate 142, 144, and 146 has the samerespective normal length and depth dimensions; has the same crosssectional height dimension; two of the three plates 142, 144, and 146have the same respective normal length and depth dimensions; the threeplates 142, 144, and 146 have the different normal length and depthdimensions; and/or middle plate 144 has a smaller respective normallength and depth dimensions relative to plates 142, 146; or the like.

FIG. 6A depicts a normal view of wires 123 a, 127 b, and 127 c withinassociated metal layers of a three plate MIM capacitor test structure100, in accordance with various embodiments of the present invention.FIG. 6A depicts test wire 123 a below the MIM capacitor 124, test wire127 b above the MIM capacitor 124, and test wire 127 c above the MIMcapacitor 124. In an embodiment, test wire 123 a is serpentinely routedsuch that test wire 123 a traverses the MIM capacitor in multipleinstances. For example, test wire 123 a traverses from the MIM capacitor124 front to the MIM capacitor 124 back; traverses in a paralleldirection to the MIM capacitor 124 back; traverses from the MIMcapacitor 124 back to the MIM capacitor 124 front; traverses in aparallel direction to the MIM capacitor 124 front; and again traversesfrom the MIM capacitor 124 front to the MIM capacitor 124 back, as isexemplary depicted in FIG. 6A.

In an embodiment, test wire 127 b is serpentinely routed such that testwire 127 b traverses the MIM capacitor in multiple instances. Forexample, test wire 127 b traverses from the MIM capacitor 124 back tothe MIM capacitor 124 front; traverses in a parallel direction to theMIM capacitor 124 front; and traverses from the MIM capacitor 124 frontto the MIM capacitor 124 back, as is exemplary depicted in FIG. 6A.Likewise, test wire 127 c is serpentinely routed such that test wire 127c traverses the MIM capacitor in multiple instances. For example, testwire 127 c traverses from the MIM capacitor 124 front to the MIMcapacitor 124 back; traverses in a parallel direction to the MIMcapacitor 124 back; and traverses from the MIM capacitor 124 back to theMIM capacitor 124 front, as is exemplary depicted in FIG. 6A. Though thetraversal direction depicted in FIG. 6A is generally in a front-backdirection, the traversal direction may further be in a left-rightdirection or a diagonal direction

In an embodiment, the test wire 127 b and test wire 127 c may each havetwo parallel portions connected by an orthogonal portion. The orthogonalportion of test wire 127 b and the orthogonal portion of test wire 127 cmay be positioned on opposing sides of MIM capacitor 124. For example,the orthogonal portion of test wire 127 b is located in front of the MIMcapacitor 124 and the orthogonal portion of test wire 127 c is locatedin back of MIM capacitor 124. A single parallel portion of test wire 127b may be located between the parallel portions of test wire 127 c. Inother words, in this embodiment, test wire 127 b and test wire 127 c maybe positioned as interlocking “V,” “C,” “U,” or similar shapes.

FIG. 6B depicts a normal view of wires 123 a, 127 b, 127 c′, and 127 c″within associated metal layers 120, 122, 126, or 128 of a three plateMIM capacitor test structure 100, in accordance with various embodimentsof the present invention. FIG. 6A depicts test wire 123 a below the MIMcapacitor 124 in wiring level 123 a, test wire 127 b above the MIMcapacitor 124 in wiring level 128, test wire 127 c′ below the MIMcapacitor 124 in wiring level 122, and test wire 127 c″ above the MIMcapacitor 124 in wiring level 126.

In an embodiment, test wire 123 a is serpentinely routed such that testwire 123 a traverses the MIM capacitor in multiple instances. Forexample, test wire 123 a traverses in one or more instances from the MIMcapacitor 124 front to the MIM capacitor 124 back; traverses in aparallel direction to the MIM capacitor 124 back outsize of the boundaryof the MIM capacitor 124; traverses from the MIM capacitor 124 back tothe MIM capacitor 124 front; traverses in a parallel direction to theMIM capacitor 124 front outside the boundary of the MIM capacitor 124;and again traverses from the MIM capacitor 124 front to the MIMcapacitor 124 back, as is exemplary depicted in FIG. 6B.

In an embodiment, test wire 127 b is serpentinely routed such that testwire 127 b traverses the MIM capacitor in multiple instances. Forexample, test wire 127 b traverses in one or more instances from the MIMcapacitor 124 front to the MIM capacitor 124 back; traverses in aparallel direction to the MIM capacitor 124 back outsize of the boundaryof the MIM capacitor 124; traverses from the MIM capacitor 124 back tothe MIM capacitor 124 front; traverses in a parallel direction to theMIM capacitor 124 front outside the boundary of the MIM capacitor 124;and again traverses from the MIM capacitor 124 front to the MIMcapacitor 124 back, as is exemplary depicted in FIG. 6B.

In an embodiment, test wire 127 c′ is serpentinely routed such that testwire 127 c′ traverses the MIM capacitor in multiple instances. Forexample, test wire 127 c′ traverses from the MIM capacitor 124 back tothe MIM capacitor 124 front; traverses in a parallel direction to theMIM capacitor 124 front outside of the boundary of the MIM capacitor124; and traverses from the MIM capacitor 124 front to the MIM capacitor124 back, as is exemplary depicted in FIG. 6B. Though the traversaldirection of test wire 127 c, depicted in FIG. 6B, is generally in aback-front direction, the traversal direction may alternatively be in aleft-right direction or a diagonal direction as is appropriate.

In an embodiment, test wire 127 c″ is serpentinely routed such that testwire 127 c″ traverses the MIM capacitor in multiple instances. Forexample, test wire 127 c″ traverses from the MIM capacitor 124 front tothe MIM capacitor 124 back; traverses in a parallel direction to the MIMcapacitor 124 back outside of the boundary of the MIM capacitor 124; andtraverses from the MIM capacitor 124 back to the MIM capacitor 124front, as is exemplary depicted in FIG. 6B. Though the traversaldirection of test wire 127 c, depicted in FIG. 6B, is generally in afront-back direction, the traversal direction may alternatively be in aleft-right direction or a diagonal direction as is appropriate.

In an embodiment, the test wire 127 c′ and test wire 127 c″ may eachhave two parallel portions connected by an orthogonal portion. Theorthogonal portion of test wire 127 c′ and the orthogonal portion oftest wire 127 c″ may be positioned on opposing sides of MIM capacitor124. For example, the orthogonal portion of test wire 127 c′ is locatedin front of the MIM capacitor 124 and the orthogonal portion of testwire 127 c″ is located in back of MIM capacitor 124. A single parallelportion of test wire 127 c′ may be located between the parallel portionsof test wire 127 c″. In other words, in this embodiment, test wire 127c′ and test wire 127 c″ may be positioned as interlocking “V,” “C,” “U,”or similar shapes.

Though a single instance of test wire 123 a, 123 b, 127 c, 127 c′,and/or 127 c″ may be depicted in FIG. 6A-FIG. 6B, there may be multipleinstances of such test wires. Though test wire 123 a, 123 b, 127 c, 127c′, and/or 127 c″ are depicted as being in a particular wiring leveleither above or below MIM 124 in FIG. 6A-FIG. 6B, the test wire 123 a,123 b, 127 c, 127 c′, and/or 127 c″ may be located in a wire level onthe opposing side of MIM 124, relative to that depicted.

FIG. 7 depicts an exemplary electronic device 400 that utilizes a chip10, in the form of a die that includes a three plate MIM capacitor teststructure 100 and that is connected directly or indirectly to a systemboard of the device 400, in accordance with various embodiments of thepresent invention. It should be appreciated that FIG. 7 provides only anillustration of one implementation of electronic device 400 thatutilizes chip 10. Electronic device 400 may be a data handling device,personal computer, server, cash machine, kiosk, infotainment system, orthe like.

Electronic device 400 includes communications bus 412, which providescommunications between chip 10, memory 404, persistent storage 410,communications unit 416, and input/output (I/O) interface(s) 414. Chip10 may call program instructions stored in memory 404, as is known inthe art. Memory 404 may be, for example, one or more random accessmemories (RAM) 406, cache memory 408, or any other suitable non-volatileor volatile storage device. Persistent storage 410 can include one ormore of flash memory, magnetic disk storage device of an internal harddrive, a solid state drive, a semiconductor storage device, read-onlymemory (ROM), EPROM, or any other computer-readable tangible storagedevice that is capable of storing program instructions or digitalinformation.

The media used by persistent storage 410 may also be removable. Forexample, a removable hard drive may be used for persistent storage 410.Other examples include an optical or magnetic disk that is inserted intoa drive for transfer onto another storage device that is also a part ofpersistent storage 410, or other removable storage devices such as athumb drive or smart card.

Communications unit 416 provides for communications with otherelectronic devices. Communications unit 416 includes one or more networkinterfaces. Communications unit 416 may provide communications throughthe use of either or both physical and wireless communications links. Inother embodiments, electronic device 400 may be devoid of communicationsunit 416. Software may be downloaded to persistent storage 410 throughcommunications unit 416.

I/O interface(s) 414 allows for input and output of data with otherdevices that may be connected to electronic device 400. I/O interface414 may further provide a connection to other external devices such as acamera, mouse, keyboard, keypad, touch screen, and/or some othersuitable input device. I/O interface(s) 414 may also connect to display418.

Display 418 provides a mechanism to display data to a user and may be,for example, a computer monitor. Alternatively, display 418 may beintegral to electronic device 400 and may also function as a touchscreen.

FIG. 8 depicts a flow diagram of a method 200 of verifying theoperational integrity of one or more vias 165 that extend through one ormore plates 142, 144, 146 of a three plate MIM capacitor test structure100, according to embodiments of the present invention. Method 200 maybe utilized by device 400; by an entity that designs or fabricates wafer5, chip 10; or the like to verify the operational integrity offunctional three plate MIM capacitors 84 by performing one or moreverification studies upon one or more three plate MIM capacitor teststructures 100 within the applicable semiconductor structure.

Method 200 begins at block 202 and continues with identifying a non-MIMtest wire, middle plate MIM test wire, and top/bottom plate MIM testwire(s) (block 204). The term non-MIM test wire is defined herein to bea test wire that is not connected by a via 165 a with any plates 142,144, or 146 of the MIM capacitor 124 within test structure 100. The termmiddle plate MIM test wire is defined herein to be a test wire that isconnected by a via 165 b with only middle plate 144 of the MIM capacitor124 within test structure 100. The term top plate MIM test wire isdefined herein to be a test wire that is connected by a via 165 c′ withonly top plate 146 of the MIM capacitor 124 within test structure 100.The term bottom plate MIM test wire is defined herein to be a test wirethat is connected by a via 165 c″ with only bottom plate 142 of the MIMcapacitor 124 within test structure 100. The term top and bottom plateMIM test wire is defined herein to be a test wire that is connected by avia 165 c with both bottom plate 142 and top plate 146 of the MIMcapacitor 124 within test structure 100. For example, test wire 123 amay be identified as the non-MIM test wire, test wire 127 b may beidentified as the middle plate MIM test wire, and test wire 127 c may beidentified as the top and plate MIM test wire, test wire 127 c′ may beidentified as the top plate MIM test wire, or test wire 127 c″ may beidentified as the bottom plate MIM test wire.

Method 200 may continue by applying electric potential to a nodecomprising the middle plate MIM test wire and the top/bottom plate MIMtest wire(s) and applying ground potential or opposing potential to thenon-MIM test wire (block 208). For example, a positive potential isapplied to test wire 127 b and to test wire 127 c and a ground ornegative potential is applied to test wire 123 a. In another example, anegative potential is applied to test wire 127 b, to test wire 127 c′,and to test wire 127 c″ and a ground or positive potential is applied totest wire 123 a. The amount of potential applied may be chosen toaccelerate potential leakage of the material of the one or more vias 165outside of the configured boundary of the one or more vias 165. Thepotentials applied to the test wires may be applied by an externaldevice, such as a voltage source, to an associated test pad 190 that isrespectively connected to a particular test wire or may be applied bychip 10 to each particular test wire.

Method 200 may continue with measuring leakage current across (1) thenode of the middle plate MIM test wire and the top/bottom plate MIM testwire(s) and (2) the non-MIM test wire (block 210). For example, it isdetermined whether there is any of leakage current between (1) the nodeof test wire 127 b and test wire 127 c and (2) test wire 123 a. Inanother example, is determined whether there is any of leakage currentbetween (1) the node of test wire 127 b, test wire 127 c′, and test wire127 c″ and (2) test wire 123 a.

Method 200 may continue with determining that there is a short betweenthe middle plate 144 or the top plate 146/bottom plate 142 and via 165 aof the non-MIM test wire, if leakage current is detected across (1) thenode of the middle plate MIM test wire and the top/bottom plate MIM testwire(s) and (2) the non-MIM test wire (block 212). For example, it isdetermined there is a short between middle plate 144, top plate 146, orbottom plate 142 and via 165 a of wire 123 a, if leakage current isdetected between (1) the node of test wire 127 b and test wire 127 c and(2) test wire 123 a. In another example, it is determined there is ashort between middle plate 144, top plate 146, or bottom plate 142 andvia 165 a of wire 123 a, if it is determined there is leakage currentbetween (1) the node of test wire 127 b, test wire 127 c′, and test wire127 c″ and (2) test wire 123 a.

Method 200 may continue with measuring leakage current across (3) themiddle plate MIM test wire and (4) the top/bottom plate MIM test wire(s)(block 214). For example, it is determined whether there is any ofleakage current between (3) test wire 127 b and (4) test wire 127 c. Inanother example, is determined whether there is any of leakage currentbetween (3) test wire 127 b and (4) test wire 127 c′ or test wire 127c″.

Method 200 may continue with determining that there is a short betweenthe middle plate 144 and the top plate 146/bottom plate 142 caused byvia 165 b, via 165 c, via 165 c′, or by via 165 c″ making contact with aplate that which it is not configured to make contact, or caused by twoor more of the plates of the MIM 124 contacting one another, if leakagecurrent is detected across (3) the middle plate MIM test wire and (4)the top/bottom plate MIM test wire(s) (block 216). For example, it isdetermined there is a short between middle plate 144 and top plate 146or bottom plate 142 if leakage current is detected between (3) test wire127 b and (4) test wire 127 c. In another example, it is determinedthere is a short between middle plate 144 and top plate 146 or bottomplate 142 if it is determined there is leakage current between (3) testwire 127 b and (4) test wire 127 c′ or test wire 127 c″.

Method 200 may continue with determining whether the measurement timeperiod of detecting the presence of leakage current is complete (block218) and if so, method 200 may end at block 220 and if not, method 200continues at block 210.

In some embodiments, there may be a plurality of test structures 100within the wafer 5 or chip 10. Each individual test structure 100 may beof similar structural geometry and method 200 may be performed uponmultiple test structure 100 iterations. In other embodiments, eachindividual test structure 100 iteration may have differing structuralgeometries (e.g., the diameter of the vias 165 within the via matrix maybe larger or smaller across different structure 100 iterations, thespacing between vias 165 within the via matrix may be greater or smalleracross different structure 100 iterations, the distance between via 165a and plates 142, 144, or 146 may differ across different structure 100iterations, the diameter of clearance 150 may be greater or smalleracross different structure 100 iterations, or the like) and method 200may be performed upon multiple test structure 100 iterations. As such, aconfiguration of a particular MIM capacitor 124 within a particular teststructure 100 may be identified where shorts within the three plate MIMcapacitor are to be expected (e.g. greater than 0.1% of occurrences),unlikely (e.g. less than 0.1% of occurrences), extremely unlikely (e.g.,less than 0.0001% of occurrences), or the like.

Referring now to FIG. 9, a block diagram of an exemplary design flow 300used for example, in semiconductor integrated circuit (IC) logic design,simulation, test, layout, and/or manufacture is shown. Design flow 300includes processes, machines and/or mechanisms for processing designstructures or devices to generate logically or otherwise functionallyequivalent representations of the structures and/or devices describedabove and shown in FIG. 1-FIG. 6B.

The design structures processed and/or generated by design flow 300 maybe encoded on machine-readable transmission or storage media to includedata and/or instructions that when executed or otherwise processed on adata processing system generate a logically, structurally, mechanically,or otherwise functionally equivalent representation of hardwarecomponents, circuits, devices, or systems. Machines include, but are notlimited to, any machine used in an IC design process, such as designing,manufacturing, or simulating a circuit, component, device, or system.For example, machines may include: lithography machines, machines and/orequipment for generating masks (e.g. e-beam writers), computers orequipment for simulating design structures, any apparatus used in themanufacturing or test process, or any machines for programmingfunctionally equivalent representations of the design structures intoany medium (e.g. a machine for programming a programmable gate array).

Design flow 300 may vary depending on the type of representation beingdesigned. For example, a design flow 300 for building an applicationspecific IC (ASIC) may differ from a design flow 300 for designing astandard component or from a design flow 300 for instantiating thedesign into a programmable array, for example a programmable gate array(PGA) or a field programmable gate array (FPGA) offered by Altera® Inc.or Xilinx® Inc.

FIG. 9 illustrates multiple such design structures including an inputdesign structure 320 that is preferably processed by a design process310. Design structure 320 may be a logical simulation design structuregenerated and processed by design process 310 to produce a logicallyequivalent functional representation of a hardware device. Designstructure 320 may also or alternatively comprise data and/or programinstructions that when processed by design process 310, generate afunctional representation of the physical structure of a hardwaredevice. Whether representing functional and/or structural designfeatures, design structure 320 may be generated using electroniccomputer-aided design (ECAD) such as implemented by a coredeveloper/designer.

When encoded on a machine-readable data transmission, gate array, orstorage medium, design structure 320 may be accessed and processed byone or more hardware and/or software modules within design process 310to simulate or otherwise functionally represent an electronic component,circuit, electronic or logic module, apparatus, device, structure, orsystem such as those shown in FIG. 1-FIG. 6B. As such, design structure320 may comprise files or other data structures including human and/ormachine-readable source code, compiled structures, andcomputer-executable code structures that when processed by a design orsimulation data processing system, functionally simulate or otherwiserepresent circuits or other levels of hardware logic design. Such datastructures may include hardware-description language (HDL) designentities or other data structures conforming to and/or compatible withlower-level HDL design languages such as Verilog and VHDL, and/or higherlevel design languages such as C or C++.

Design process 310 preferably employs and incorporates hardware and/orsoftware modules for synthesizing, translating, or otherwise processinga design/simulation functional equivalent of the components, circuits,devices, or structures shown FIG. 1-FIG. 6B to generate a Netlist 380which may contain design structures such as design structure 320.Netlist 380 may comprise, for example, compiled or otherwise processeddata structures representing a list of wires, discrete components, logicgates, control circuits, I/O devices, models, etc. that describes theconnections to other elements and circuits in an integrated circuitdesign. Netlist 380 may be synthesized using an iterative process inwhich netlist 380 is resynthesized one or more times depending on designspecifications and parameters for the device. As with other designstructure types described herein, netlist 380 may be recorded on amachine-readable data storage medium or programmed into a programmablegate array. The storage medium may be a non-volatile storage medium suchas a magnetic or optical disk drive, a programmable gate array, acompact flash, or other flash memory. Additionally, or in thealternative, the storage medium may be a system or cache memory, bufferspace, or electrically or optically conductive devices in which datapackets may be intermediately stored.

Design process 310 may include hardware and software modules forprocessing a variety of input data structure types including Netlist380. Such data structure types may reside, for example, within libraryelements 330 and include a set of commonly used elements, circuits, anddevices, including models, layouts, and symbolic representations, for agiven manufacturing technology (e.g., different technology nodes, 32 nm,45 nm, 90 nm, etc.). The data structure types may further include designspecifications 340, characterization data 350, verification data 360,design rules 370, and test data files 385 which may include input testpatterns, output test results, and other testing information. Designprocess 310 may further include, for example, standard mechanical designprocesses such as stress analysis, thermal analysis, mechanical eventsimulation, process simulation for operations such as casting, molding,and die press forming, etc.

One of ordinary skill in the art of mechanical design can appreciate theextent of possible mechanical design tools and applications used indesign process 310 without deviating from the scope and spirit of theinvention claimed herein. Design process 310 may also include modulesfor performing standard circuit design processes such as timinganalysis, verification, design rule checking, place and routeoperations, etc.

Design process 310 employs and incorporates logic and physical designtools such as HDL compilers and simulation model build tools to processdesign structure 320 together with some or all of the depictedsupporting data structures along with any additional mechanical designor data (if applicable), to generate a second design structure 390.Design structure 390 resides on a storage medium or programmable gatearray in a data format used for the exchange of data of mechanicaldevices and structures (e.g. information stored in a IGES, DXF,Parasolid XT, JT, DRG, or any other suitable format for storing orrendering such mechanical design structures).

Similar to design structure 320, design structure 390 preferablycomprises one or more files, data structures, or other computer-encodeddata or instructions that reside on transmission or data storage mediaand that when processed by an ECAD system generate a logically orotherwise functionally equivalent form of one or more of the embodimentsof the invention shown in FIG. 1-FIG. 6B. In one embodiment, designstructure 390 may comprise a compiled, executable HDL simulation modelthat functionally simulates the devices shown in FIG. 1-FIG. 6B.

Design structure 390 may also employ a data format used for the exchangeof layout data of integrated circuits and/or symbolic data format (e.g.information stored in a GDSII (GDS2), GL1, OASIS, map files, or anyother suitable format for storing such design data structures). Designstructure 390 may comprise information such as, for example, symbolicdata, map files, test data files, design content files, manufacturingdata, layout parameters, wires, levels of metal, vias, shapes, data forrouting through the manufacturing line, and any other data required by amanufacturer or other designer/developer to produce a device orstructure as described above and shown in FIG. 1-FIG. 6B. Designstructure 390 may then proceed to a stage 395 where, for example, designstructure 390: proceeds to tape-out, is released to manufacturing, isreleased to a mask house, is sent to another design house, is sent backto the customer, etc.

The accompanying figures and this description depicted and describedembodiments of the present invention, and features and componentsthereof. Those skilled in the art will appreciate that any particularnomenclature used in this description was merely for convenience, andthus the invention should not be limited by the specific processidentified and/or implied by such nomenclature. Therefore, it is desiredthat the embodiments described herein be considered in all respects asillustrative, not restrictive, and that reference be made to theappended claims for determining the scope of the invention.

The exemplary methods and techniques described herein may be used in thefabrication or verification of integrated circuit chips. The resultingintegrated circuit chips can be distributed by the fabricator in rawwafer form (i.e., as a single wafer that has multiple unpackaged chips),as a bare die, or in a packaged form. In the latter case, the chip ismounted in a single chip package (e.g., a plastic carrier, with leadsthat are affixed to a motherboard or other higher level carrier) or in amultichip package (e.g., a ceramic carrier that has either or bothsurface interconnections or buried interconnections). The chip is thenintegrated with other chips, discrete circuit elements and/or othersignal processing devices as part of either (a) an intermediate product,such as a motherboard, or (b) an end product. The end product can be anyproduct that includes integrated circuit chips, ranging from toys andother low-end applications to advanced computer products having numerouscomponents, such as a display, a keyboard or other input device and/or acentral processor, as non-limiting examples.

The invention claimed is:
 1. A method of testing a three plate MIMcapacitor structure comprising: applying a voltage to a first plate of athree plate MIM capacitor, a second plate of the three plate MIMcapacitor, and a third plate of the three plate MIM capacitor; applyingground potential to a via adjacent to the three plate MIM capacitor;detecting leakage current across the middle plate and the via, detectingleakage current across the top plate and the via, or detecting leakagecurrent across the middle plate and the via; and determining there is ashort between one of the bottom plate, middle plate, or top plate andthe via caused by a defect of the via, if leakage current is detectedacross the middle plate and the via, if leakage current is detectedacross the top plate and the via, or if leakage current is detectedacross the middle plate and the via.
 2. The method of claim 1, wherein afirst via is connected to the middle plate and extends through anassociated clearance of the top plate.
 3. The method of claim 2, whereina second via is connected to both the top plate and the bottom plate andextends through an associated clearance of the middle plate.
 4. Themethod of claim 3, wherein a first wire is connected to the via and isserpentine shaped traversing the three plate MIM capacitor.
 5. Themethod of claim 4, wherein a second wire is connected to the second via,wherein a third wire is connected to the third via, and wherein thesecond wire and the third wire comprises two parallel portions connectedby an orthogonal portion.
 6. The method of claim 5, wherein one of thetwo parallel portions of the third wire is between the two parallelportions of the second wire.
 7. The method of claim 4, wherein the firstwire is located in a wiring level above or below the three plate MIMcapacitor.
 8. A three plate MIM capacitor structure comprising: a threeplate MIM capacitor comprising a bottom plate, a middle plate, and a topplate; a via matrix normal to the bottom plate, the middle plate, andthe top plate, the via matrix comprising: a first via group comprisingvias that are adjacent to the bottom plate, middle plate, and top plate;a second via group comprising vias that are configured to contact onlythe middle plate; and a third via group comprising vias that areconfigured to contact only the top plate and bottom plate; a first wirewithin a wiring level below the three plate MIM capacitor connected tothe first via group; a second wire within a wiring level above the threeplate MIM capacitor connected to the second via group; and a third wirewithin a wiring level above the three plate MIM capacitor connected tothe third via group.
 9. The three plate MIM capacitor structure of claim8, wherein the vias of the first via group are comprised within a firstcolumn of the via matrix, the vias of the second via group are comprisedwithin a second column of the via matrix, and the vias of the third viagroup are comprised within a third column of the via matrix.
 10. Thethree plate MIM capacitor structure of claim 8, wherein the vias of thefirst via group are comprised within a first row of the via matrix, thevias of the second via group are comprised within a second row of thevia matrix, and the vias of the third via group are comprised within athird row of the via matrix.
 11. The three plate MIM capacitor structureof claim 8, wherein the vias of the first via group are comprised withina first diagonal of the via matrix, the vias of the second via group arecomprised within a second diagonal of the via matrix, and the vias ofthe third via group are comprised within a third diagonal of the viamatrix.
 12. The three plate MIM capacitor structure of claim 8, whereinthe vias of the second via group extend through associated clearanceswithin the top plate.
 13. The three plate MIM capacitor structure ofclaim 8, wherein the vias of the third via group extend throughassociated clearances within the middle plate.
 14. The three plate MIMcapacitor structure of claim 8, wherein the first wire is serpentineshaped.
 15. The three plate MIM capacitor structure of claim 8, whereineach of the second wire and third wire comprises two parallel portionsconnected by an orthogonal portion.
 16. The three plate MIM capacitorstructure of claim 15, wherein one of the two parallel portions of thethird wire is between the two parallel portions of the second wire. 17.A three plate MIM capacitor structure comprising: a three plate MIMcapacitor comprising a bottom plate, a middle plate, and a top plate; avia matrix normal to the bottom plate, the middle plate, and the topplate, the via matrix comprising: a first via group comprising vias thatare adjacent to the bottom plate, middle plate, and top plate; a secondvia group comprising vias that are configured to contact only the middleplate; and a third via group comprising vias that are configured tocontact only the top plate and bottom plate; a first wire within awiring level above the three plate MIM capacitor connected to the firstvia group; a second wire within a wiring level below the three plate MIMcapacitor connected to the second via group; and a third wire within awiring level below the three plate MIM capacitor connected to the thirdvia group.
 18. The three plate MIM capacitor structure of claim 17,wherein the vias of the first via group are comprised within a firstcolumn of the via matrix, the vias of the second via group are comprisedwithin a second column of the via matrix, and the vias of the third viagroup are comprised within a third column of the via matrix.
 19. Thethree plate MIM capacitor structure of claim 17, wherein the vias of thefirst via group are comprised within a first row of the via matrix, thevias of the second via group are comprised within a second row of thevia matrix, and the vias of the third via group are comprised within athird row of the via matrix.
 20. The three plate MIM capacitor structureof claim 17, wherein the vias of the first via group are comprisedwithin a first diagonal of the via matrix, the vias of the second viagroup are comprised within a second diagonal of the via matrix, and thevias of the third via group are comprised within a third diagonal of thevia matrix.